st中华17313(17313是啥意思)

道指k线图 2021年4月28日发(作者：航天信息(600271)航天信息)

CSD17313Q2
S260A–MARCH2010–REVISEDMARCH2010
30VN-ChannelNexFET?PowerMOSFET
FEATURES
Optimizedfor5VGateDrive
UltraLowQ
g
andQ
gd
LowThermalResistance
PbFree
RoHSCompliant
HalogenFree
SON2-mm×2-mmPlasticPackage
V
DS
Q
g
Q
gd
R
DS(on)
V
GS(th)
PRODUCTSUMMARY
DraintoSourceVoltage
GateChargeTotal(4.5V)
GateChargeGatetoDrain
V
GS
=3V
DraintoSourceOnResistance
ThresholdVoltage
V
GS
=4.5V
V
GS
=8V
1.3
30
2.1
0.4
31
26
24
V
nC
nC
m?
m?
m?
V
?
?
?
?
?
?
?
APPLICATIONS
?
?
DC-DCConverters
BatteryandLoadManagementApplications
TextAddedForSpacing
ORDERINGINFORMATION
Device
CSD17313Q2
Package
SON2-mm×2-mm
PlasticPackage
Media
13-Inch
Reel
Qty
3000
Ship
Tapeand
Reel
DESCRIPTION
TheNexFETpowerMOSFEThasbeendesignedto
minimizelossesinpowerconversionapplicationsand
2-mm×
2-mmSONoffersexcellentthermalperformancefor
thesizeofthepackage.
TopView
V
DS
V
GS
I
D
I
DM
P
D
D1
D
6D
TextAddedForSpacing
ABSOLUTEMAXIMUMRATINGS
T
A
=25°Cunlessotherwisestated
DraintoSourceVoltage
GatetoSourceVoltage
ContinuousDrainCurrent,T
C
=25°C
ContinuousDrainCurrent
(1)
PulsedDrainCurrent,T
A
=25°C
PowerDissipation
OperatingJunctionandStorage
TemperatureRange
AvalancheEnergy,SinglePulse,
I
D
=19A,L=0.1mH,R
G
=25Ω
(2)
VALUE
30
+10–8
5
5
20
2.3
–55to150
18
UNIT
V
V
A
A
A
W
°C
mJ
T
J
,
T
STG
E
AS
D2
5
D
(1)PackageLimited
(2)Pulseduration≤300ms,dutycycle≤2%
G
3
S
4
S
P0108-01
TextForSpacing
R
DS(on)
vsV
GS
80
R
D
S
(
o
n
)
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V
G
S

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a
t
e
-
t
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-
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V
o
l
t
a
g
e

-

V
70
60
50
40
30
20
10
0
012345678
V
GS
- Gate-to-Source Voltage - 大秦铁路股吧 V
910
G006
TextForSpacing
GATECHARGE
8
I
D
=4A
7
6
5
4
3
2
1
0
00.511.522.5
Q
g
- Gate Charge - |基金270006 nC
33.54
G003
I
D
=4A
V
DS
=15V
T
C
=125°C
T
C
=25°C
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas
Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
Copyright?2010,TexasInstrumentsIncorporated

CSD17313Q2
SLPS260A–MARCH2010–
dsshouldbeshortedtogetherorthedeviceplacedinconductivefoam
duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS
(T
A
=25°Cunlessotherwisestated)
PARAMETER
StaticCharacteristics
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
R
G
Q
g
Q
gd
Q
gs
Q
g(th)
Q
oss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Q
rr
t
rr
DraintoSourceVoltage
DraintoSourceLeakage
GatetoSourceLeakage
GatetoSourceThresholdVoltage
DraintoSourceOnResistance
Transconductance
InputCapacitance
OutputCapacitance
ReverseTransferCapacitance
SeriesGateResistance
GateChargeTotal(4.5V)
GateCharge–GatetoDrain
GateChargeGatetoSource
GateChargeatVth
OutputCharge
TurnOnDelayTime
RiseTime
TurnOffDelayTime
FallTime
DiodeForwardVoltage
ReverseRecoveryCharge
ReverseRecoveryTime
I
SD
=4A,V
GS
=0V
V
DD
=13.5V,I
F
=4A,
didt=300Ams
V
DS
=15V,V
GS
=4.5V,
I
D
=4A,R
G
=2?
V
DS
=13.5V,V
GS
=0V
V
DS
=15V,
I
D
=4A
V
GS
=0V,V
DS
=15V,
f=1MHz
V
GS
=0V,I
D
=250mA
V
GS
=0V,V
DS
=24V
V
DS
=0V,V
GS
=+10-8V
V
DS
=V
GS
,I
D
=250mA
V
GS
=3V,I
D
=4A
V
GS
=4.5V,I
D
=4A
V
GS
=8V,I
D
=4A
V
DS
=15V,I
D
=4A
DynamicCharacteristics
260
140
13
1.3
2.1
0.4
0.7
0.3
3.8
2.8
3.9
4.2
1.3
0.85
6.4
12.9
1
340
180
17
2.6
2.7
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
V
nC
ns
0.91.3
31
26
24
16
30
1
100
1.8
42
32
30
V
mA
nA
V
m?
m?
m?
S
TESTCONDITIONSMINTYPMAXUNIT
DiodeCharacteristics
THERMALCHARACTERISTICS
(T
A
=25°Cunlessotherwisestated)
PARAMETER
R
qJC
R
qJA
(1)
(2)
ThermalResistanceJunctiontoCase
(1)
(1)(2)
MINTYPMAX
7.4
67
UNIT
°CW
°CWThermalResistanceJunctiontoAmbient
R
qJC
isdeterminedwiththedevicemountedona1-inch
2
(6.45-cm
2
),2-oz.(0.071-mmthick)Cupadona1.5-inch×1.5-inch(3.81-cm×
3.81-cm),0.06-inch(1.52-mm)thickFR4PCB.R
qJC
isspecifiedbydesign,whereasR
qJA
isdeterminedbytheuser’sboarddesign.
DevicemountedonFR4materialwith1-inch
2
(6.45-cm
2
),2-oz.(0.071-mmthick)Cu.
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Copyright?2010,TexasInstrumentsIncorporated

CSD17313Q2
S260A–MARCH2010–REVISEDMARCH2010
MaxR
qJA
=67°CW
whenmountedon
1inch
2
(6.45cm
2
)of
2-oz.(0.071-mmthick)
Cu.
G1D1S1
M0179-01
MaxR
qJA
=228°CW
whenmountedona
minimumpadareaof
2-oz.(0.071-mmthick)
Cu.
G1S1D1
M0180-01
TextAddedForSpacing
TextAddedForSpacing
TextAddedForSpacing
TextAddedForSpacing
TYPICALMOSFETCHARACTERISTICS
(T
A
=25°Cunlessotherwisestated)
10
Z
q
J
A
-
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N
o
r
m
a
l
i
z
e
d
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
1
0.5
0.3
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
P
Duty Cycle=t
1
t
2
t
1
t
2
Typical R
qJA
=182°CW (min Cu)
T
J
=P?Z
qJA
?R
qJA
0.010.11
t
p
- Pulse Duration - 000039股吧 s
101001k
G012
0.001
entThermalImpedance
Copyright?2010,TexasInstrumentsIncorporated
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